S-KN-1

Shinjae You (Chungnam National University, Republic of Korea)

On the mechanism of Arcing phenomenon in low temperature plasma

S-KN-2

Shu-Kai S. Fan (Morris Fan) (National Taipei University of Technology, Taiwan)

Enterprise Intelligentization of Semiconductor Manufacturing in Taiwan

Dr. Morris Fan is a professor in the Department of Industrial Engineering and Management, National Taipei University of Taiwan. He served as the Vice President and now the Board Member of Asia Pacific Industrial Engineering and Management Society (APIEMS). Dr. Fan received 2022 Best Semiconductor Manufacturing Automation Paper in Technology awarded by Technical Committee on Semiconductor Manufacturing Automation of IEEE Robotics and Automation Society (RAS). He was also a Y.S. Hsu Outstanding Professor of Science, Technology and Humanity Category sponsored by Far Eastern Y.S. Hsu Science and Technology Memorial Foundation. Professor Fan received Quality Award sponsored by Chinese Society for Quality (CSQ) and Industry-Academy Cooperation Award sponsored by Ministry of Education (MOE). He received B.S. in Industrial Engineering from Tung-Hai University (1988). He received M.S. in Industrial Engineering from University of Pittsburgh (1992) and Ph.D. in Industrial Engineering from University of Texas-Arlington (1996). Professor Fan’s research interests include Engineering Statistics & Quality Engineering, Applied Mathematical Programming, Applied Operations Research & Evolutionary Computation, Manufacturing Systems Engineering, and Big Data Analytics & Intelligent Computing. He now serves an Editor-in-Chief of Engineering Optimization (SCI) published by Taylor & Francis since 2020. He used to serve as the Editor-in-Chief of Journal of Quality published by Chinese Society for Quality and an Associate Editor of Journal of Industrial and Production Engineering published by Taylor & Francis.

S-KN-3

Hisashi Yamada (National Institute of Advanced Industrial Science and Technology, Japan)

Ammonia-free Plasma-enhanced MOCVD for Nitride Semiconductors

Hisashi Yamada was born in 1975 in Japan. He received the Doctor of Engineering degree from University of Tsukuba in 2009. Since 2016, he is a senior researcher of GaN Advanced Device Open Innovation Laboratory (GaN-OIL) at the National Institute of Advanced Industrial Science and Technology (AIST). He is interested in crystal growth and device applications of compound semiconductors, such as GaN, AlN, InN, and BN. He is a designated Professor of the Institute of Materials and Systems for Sustainability (IMaSS) in Nagoya University from 2023.

S-KN-4

Geun Young Yeom (Sungkyunkwan University, Republic of Korea)

Beam-assisted Atomic Layer Etching

Geun Young Yeom was born in 1958 in Korea. He received the Ph.D. degree from University of Illinois at Urbana-Champaign in 1989. From 1992 to 2022, he was a Professor of Materials Science and Engineering Department at Sungkyunkwan University. Currently, He is a Distinguished Professor in the same department. He is interested in plasma processing related to etching and deposition. Especially, he is interested in various next generation plasma etch processing such as plasma etching of dielectric materials using low global warming gases, processing of 2 dimensional materials such as transition metal dichalcogenides, atomic layer/cyclic etching of various materials, etc. He was presidents of Korean Materials Research Society and Korean Vacuum Society and is currently vice presidents of the Korean Society of Surface Science and Engineering and the Korean Society of Semiconductor & Display Technology.

S-KN-5

Sang Hoon Ahn (Samsung Electronics Co. Ltd., Republic of Korea)

Past, Present, and Future Plasma Solutions to Semiconductor Challenges

Sang Hoon Ahn received his BS degree in materials science and engineering at the University of California, Berkeley (1993), and Ph.D. at Massachusetts Institute of Technology (1999). He has engaged in advanced dielectric process development for microelectronics industry longer than two decades. He worked for Dielectric System and Module at Applied Materials, Inc. for 7 years. In 2006, he joined and has worked for the Semiconductor Research and Development (SRD) center at Samsung Electronics Co., Ltd. since then. His expertise includes advanced dielectrics such as low k dielectrics, hardmasks, area selective deposition, and advanced patterning materials. He served for International Interconnect Technology Conference (IITC) as an Asian committee member since 2020, and for Korean Conference for Semiconductors as a committee member for Interconnect and Package for more than 7 years. He recently joined ASD 2024 Scientific Committee. Finally, he served as a founding leader for Samsung Interconnect Society for 6 years.

S-I-1

Jaeho Kim (Samsung Electronics, Republic of Korea)

Recent trends of plasma deposition technologies for the development of next-generation electronic devices

Jaeho Kim is now a Master (VP of Technology) in Samsung Electronics Co., Ltd. He has over 25 years of research experience for both fundamental aspects and industrial applications of plasma processing technologies. He graduated from the Kyungpook National University with the major of Electrical Engineering in 1998. For 1999 - 2004, he studied in the University of Tokyo for his master and Ph.D. degrees. After finishing his graduate study, he joined the University of Tokyo as a research associate. In 2006, he joined the National Institute of Advanced Industrial Science and Technology (AIST) to study plasma processing technologies and industrial applications of carbon nanomaterials such as nanocrystalline diamond, graphene and CNT. From 2019 to 2020, he stayed in the University of Colorado - Boulder as a visiting scholar to study atomic layer deposition (ALD) and atomic layer etching (ALE) technologies. As well as, he attended several joint research projects for the studies on plasma applications including plasma medicine, surface treatments, nitriding of metal surfaces and nitride-semiconductor optical devices until he left AIST in 2021. He is a member of the Institute of Electrical Electronics Engineers (IEEE), the Japan Society of Applied Physics (JSAP) and The Korean Vacuum Society. He served as a secretary of the division of plasma electronics in JSAP for 2012 - 2013, a secretary of the technical committee on plasma science and technology in the Institute of Electrical Engineers of Japan (IEEJ) for 2012 - 2014 and 2018 - 2019. He served as a vice chair and chair of the IEEE Nuclear and Plasma Society Japan Chapter in 2013 and 2014, respectively. He served as a member of Investigating R&D committee for plasma surface technology in IEEJ for 2019 - 2021 and an associate editor of the Journal of Electrical Engineering & Technology (JEET) for 2017 - 2018.

S-I-2

Satoshi Hamaguchi (Osaka University, Japan)

Plasma-enhanced atomic layer processing for semiconductor processing

Satoshi Hamaguchi, Ph.D., has been Professor at the Graduate School of Engineering, Osaka University, Osaka, Japan, since 2004. He works on analyses of plasma processing for semiconductor manufacturing, using modelling, numerical simulations, and beam and plasma experiments. His interest also includes plasma medicine, nuclear fusion, application of data science to plasma science. Prior to joining Osaka University, Dr. Hamaguchi was Associate Professor at the Graduate School of Energy Sciences, Kyoto University, Kyoto, Japan, from 1998 to 2004, Research Staff Member of T. J. Watson Research Center, IBM Research Division, IBM Co. at Yorktown Heights, New York, USA, from 1990 to 1998, and Research Fellow at the Institute of Fusion Studies, University of Texas, Austin, Texas, USA, from 1988 to 1990. Dr. Hamaguchi holds M. Sci and Ph.D. degrees in mathematics from Courant Institute of Mathematical Sciences, Department of Mathematics, New York University, New York, USA, and B. Sc. M. Sci, and Ph.D. degrees in physics from the Department of Physics, University of Tokyo, Tokyo, Japan.